Product Code: ICAL05_M808

Direct-patterning of Silicon Carbide by Nanosphere-Assisted Pulsed Laser
Authors:
Arvind Battula, University of Texas at Austin; Austin TX USA
Senthil Theppakuttai, The University of Texas at Austin; Austin TX USA
Shaochen Chen, The University of Texas at Austin; Austin TX USA
Presented at ICALEO 2005

Optical near-field enhancement obtained between the spheres and substrate by irradiating with laser beam can be used for nano-patterning the hard-to-machine bulk silicon carbide (SiC). For this study a monolayer of silica (SiO2) spheres of 1.76 micorn and 640 nm diameter are deposited on the SiC substrate and then irradiated with an Nd:YAG laser of wavelength 355 nm and 532 nm. Scanning electron microscope and atomic force microscope are used to characterize the features. It was found that the features obtained were having diameters around 150 to 450 nm and the depths varying from 70 to 220 nm.