Product Code: ICAL08_M902

Gallium Nitride Led Shaping by Dpss Laser Processing
Authors:
A Dixit, National Centre for Laser Applications; Galway Ireland
D O' Mahony, Tyndall National Institute; Cork Ireland
F Parker, National Centre for Laser Applications; Galway Ireland
H Howard, National Centre for Laser Applications; Ireland Ireland
A Conneely, National Centre for Laser Applications; Galway Ireland
G.M. O' Connor, National Centre for Laser Applications; Galway Ireland
P Maaskant, Tyndall National Institute; Cork Ireland
T. Glynn, National Centre for Laser Applications; Galway Ireland
B Corbett, Tyndall National Institute; Cork Ireland
Presented at ICALEO 2008

Gallium Nitride (GaN) free-standing substrate material has attracted considerable attention recently for high quality LED and Laser fabrication due to their better lattice and thermal match with the LED/Laser epi-layers than existing substrates (Sapphire or SiC). However there is still scope for the further development of both the substrate material and the epi-layer LED structures. Here we report on a preliminary investigation of the shaping capabilities of a laser-machining system on GaN LED wafer substrates. The pieces were scribed and shaped using a Nd:YVO4 diode pumped solid state AVIA 355-7000 laser (Coherent). Finally the machining of 2-dimensional scribing patterns in the free-standing wafer materials is discussed.