Product Code: ICAL08_M903

Excimer Laser Induced Photoresist Stripping on the Silicon Wafer
Authors:
Hoon Jeong, Kitech; Cheonan South Korea
Jae Dong Song, Kitech; Cheonan South Korea
Ji-Young Baek, Korea Institute of Industrial Technology; CheonAnsi South Korea
Myong-Hwa Lee, Kitech; Cheonan South Korea
Sang Bum Kim, Kitech; Cheonan South Korea
Gyung Soo Kim, Kitech; Cheonan South Korea
Presented at ICALEO 2008

There is a growing interest to develop a new cleaning technology to preclude the undesirable effects of wet cleaning technologies such as environmental pollution and the low cleaning efficiency on the modern electronic industry and data storage industry. Laser cleaning is a potential technology to remove various pollutants on a wafer surface. The stripping of the photoresist(PR) layer on a silicon wafer was investigated by using the line beam of a KrF excimer laser with a wavelength of 248 nm. The silicon wafer surfaces were measured by a scanning electron microscopy(SEM) and the compositions of the PR covered wafers were determined by an energy dispersive spectroscopy(EDS). PR layers with various thickness were removed perfectly at an energy density of 700 mJ/cm2 after a 30-pulse irradiation or less. The EDS results show that the PR layer was removed more than 95%. The laser dry cleaning technology has shown that the superior ability on the PR stripping without any silicon wafer damage.