Product Code: ICA11_M1203
Functionalization of Sapphire Surfaces Using Fs-Laser Radiation and Selective Etching
Authors:
Maren Hoerstmann-Jungemann, Chair for Laser Technology LLT; Aachen Germany
Dominik Dobrzanski, Chair for Laser Technology LLT; Aachen Germany
Dagmar Schaefer, Chair for Laser Technology LLT; Aachen Germany
Ingomar Kelbassa, Chair for Laser Technology LLT; Aachen Germany
Presented at ICALEO 2011
Micro- and nano-structuring of sapphire and glasses is an important market e.g. for microfluidic devices and sensors that combine optical and microfluidic features. In microfluidic applications the surface properties of the material become more important since the functionality of the system can be improved by influencing properties like the wet ability. Applying functional coatings is one way to change surface properties like the wet ability. Since coatings are often not long lasting in harsh environments nanostructuring of surfaces with fs-laser radiation is a technique which enables the change of surface properties of sapphire and glasses in a permanent way. Sub-wavelength ripples are periodic nanostructures which are very suitable for this application.
The In-volume Selective Laser Etching technique ISLE is a two step process for micromachining of transparent materials, e.g. sapphire and glasses. Firstly, material modifications are induced by irradiating the sample with tightly focused fs-laser radiation. Subsequently the irradiated area is removed or cleaned by wet etching.
The use of high repetition rate fs-lasers, e.g. FCPA lasers with f= 0.1-5 MHz, potentially enables a high productivity, but is actually limited by available handling systems which do not allow the combination of high speed, high precision and high numerical aperture.
To overcome this limitations mentioned above scanning optics for fs-laser writing with high precision (x= 100-300 nm), high speed (v= 100-300 mm/s) and large numerical aperture (NA= 0.4-1.2) is developed.
New results which are achieved in the field of functional surfaces with the ISLE method in combination with the developed scanning optics will be shown and discussed.
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