Product Code: ICA11_M902

The Modification of ZnO Thin Films Induced by Excimer Laser Irradiation Under Different Atmospheres
Authors:
Yong Zeng, Beijing University of Technology; Beijing Peoples Republic of China
Presented at ICALEO 2011

Abstract: In this paper, we want to show the photoluminescence(PL) properties, electric properties and surface morphology of ZnO thin films which were irradiated by KrF excimer laser under different atmospheres (air, oxygen, nitrogen). After laser irradiation(no matter whatever atmosphere), compared with the as-prepared thin films, the irradiated thin films exhibit a series of visible properties: resistivity is decreased by three orders of magnitude, carrier concentration is increased by two orders of magnitude, UV emission is obviously lower and a little red-shift, and the visible emissions change very much. To further understand the mechanism of interaction be-tween KrF excimer laser and zinc oxide, temperature-dependent photoluminescence is employed. From the temperature-dependent PL, compared with the as-prepared sam-ples, it show that the irradiated thin films missed D0X-1LO and D0X-2LO transitions, on the other hand, these two D0X transitions,3.32eV and 3.333eV, are merged into one peak. By means of post annealing treatments, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Hall measurement, photoluminescence (PL) measurement and Raman spectra analysis, the possible mechanism of interaction between KrF excimer laser and zinc oxide thin films are discussed.