Product Code: ICA12_N303

Evaluation of Thermal Resistance at the Silicon/Diamond Interface Through Infrared Photothermal Radiometry
Authors:
Thomas Guillemet, Institut de Chimie de la Matière Condensée, ICMCB-CNRS, Univ. Bordeaux 1, Department of Electrical Engineering, Department of Mechanical and Materials Engineering, Univ. of Nebraska-Lincoln; Pessac France
Jean-Luc Battaglia, Institut de Mecanique et Ingenierie, Department TREFLE; Talence France
Andrzej Kusiak, Institut de Mecanique et Ingenierie, Department TREFLE; Talence France
Andrea Cappella, Institut de Mecanique et Ingenierie, Department TREFLE; Talence France
Jean-Marc Heintz, Institut de Chimie de la Matière Condensée, ICMCB-CNRS, Unive. Bordeaux 1; Pessac France
Namas Chandra, Department of Mechanical and Materials Engineering, Univ. of Nebraska-Lincoln; Lincoln NE USA
Jean-Francois Silvain, Institut de Chimie de la Matière Condensée, ICMCB-CNRS, Univ. Bordeaux 1; Pessac France
Yongfeng Lu, Department of Electrical Engineering, Univ. of Nebraska-Lincoln; Lincoln NE USA
Presented at ICALEO 2012

Diamond films are attractive materials for passive applications in thermal management because of their high in-plane thermal conductivity and low thermal expansion coefficient. Although thermal conductivity of diamond films has been extensively investigated, there is still a need to evaluate the thermal resistance existing at interfaces between diamond films and engineering substrates such as silicon. Knowledge of the boundary thermal resistance is critical to a better understanding of the heat-transfer process occurring at the diamond film/substrate interface. In this study, modulated infrared photothermal radiometry was employed to measure the thermal response of diamond films deposited on silicon substrates through laser-assisted combustion synthesis. The thermal resistance normal to the diamond/silicon interface was then estimated from the measurement of the phase and the amplitude of the thermal response. The diamond/silicon boundary resistance has previously been measured for diamond films grown through microwave-plasma assisted method. However no such data exists for the diamond films grown through laser-assisted combustion synthesis. Preliminary results show that the layered diamond/Si system exhibits an interfacial thermal resistance of about 210-8 W.K-1. The technique developed in this study enables a precise evaluation of the thermal resistance at the diamond/silicon interface and is promising for various thermal management applications of diamond thin-films in optics, electronics, or mechanics.